![]() For strong feedback, we examine both the steady state and dynamical laser properties such as small signal response and large signal current modulation. We present a set of rate equations for the modal amplitudes and carrier-inversion moments that describe the deterministic multi-mode dynamics of a semiconductor laser due to spatial hole burning. In the limit of a single external cavity reflection, our field equation reduces to a form of the well-known Lang–Kobayashi equation that describes very weak external feedback. The Bogatov effect of asymmetric gain suppression in semiconductor lasers is derived and the potential of the model for a two and three-mode laser is illustrated by numerical and analytical methods. Rather than including multiple external cavity reflections explicitly, we include all external cavity reflections through the introduction of a single additional feedback parameter and one extra term in the field equation. A common approach is to solve a set of rate equations for photon and carrier density, using one rate equation per longitu- dinal mode 7-10. We apply this model to the external cavity laser. ![]() Since the non-radiative recombination time of the carriers is typically much longer than the diode round trip time, we use a multiple scales analysis to obtain a model much simpler in form than the travelling wave model, but as accurate, without assuming that the gain within the diode is uniform. The formalism is based upon the usual travelling wave phenomenological model for the field and carriers within the semiconductor gain medium. The modulation characteristics of a semiconductor laser are most easily described by the so-called rate equations. We present a formalism describing the dynamics of a semiconductor diode and apply it to the study of the dynamics of external cavity lasers within the strong regime.
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